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esi esi 1 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information ES25P40 4mbit cmos 3.0 volt flash memory with 75mhz spi bus interface architectural advantages ? single power supply operation - 2.7v -3.6v for read and program operations ? memory architecture - eight sectors with 512 kb each ? program - page program ( up to 256 bytes) in 1.5ms (typical) - program cycles are on a page by page basis ?erase - 0.5s typical sector erase time - 3s typical bulk erase time ? endurance - 100,000 cycles per sector (typical) ? data retention - 20 years (typical) ? parameter page - 256 byte page independent from main memory for parameter storage - seperate from a rray, erase time < 20ms ? device id - jedec standard two-byte electronic signature - res instruction one-byte electronic signature for backward compatibility - manufacturer and device type id ? process technology - manufactured on 0.18um process technology ? package option - industry standard pinouts - 8-pin so (208mil) package - all pb-free devices are rohs compliant performance characteristics ?speed - 75mhz clock rate (maximum) ? power saving standby mode - standby mode 50ua (max) - deep power down mode 1ua (typical) memory protection features ? memory protection - w# pin works in conjunction with status register bits to protect specified memory areas - status register block protection bits (bp2, bp1, bp0) in status register c onfigure parts of memory as read only software features ? spi bus compatible serial interface
esi esi 2 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information the ES25P40 device is a 3.0 volt (2.7v to 3.6v) single power flash memory device. ES25P40 con- sists of eight sectors, each with 512 kb memory. data appears on si input pin when inputting data into the memory and on the so output pin when outputting data from the memory. the devices are designed to be programmed in-system with the standard system 3.0 volt vcc supply. the memory can be programmed 1 to 256 bytes at a time, using the page program instruction. the memory supports sector erase and bulk erase instructions. each device requires only a 3.0 volt power supply (2.7v to 3.6v) for both read and write functions. internally generated and regulated voltages are pro- vided for program operations. this device does not require vpp supply. general product description block diagram ps logic io data path array - r array - l rd sram xdec cs# sck si so gnd vcc w# hold#
esi esi 3 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information pin descriptions pin description sck serial clock input si serial data input so serial data output cs# chip select input w# write protect input hold# hold input vcc supply voltage input gnd ground input hold# so cs# w# gnd vcc sck si 1 2 3 4 5 6 7 8 connection diagrams 8-pin plastic small outline package (so)
esi esi 4 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information signal description serial data output (so) this output signal is used to transfer data serially out of the device. data is shifted out on the falling edge of serial clock (sck). serial data input (si) this input signal is used to transfer data serially into the device. it receives in structions, addresses, and the data to be programmed. values are latched on the rising edge of serial clock (sck). serial clock (sck) this input signal provides the timing of the serial interface. instructions, addresses, and data present at the serial data input (si) are latched on the ris- ing edge of serial clock (sck). data on serial data output (so) changes after the falling edge of serial clock (sck). chip select (cs#) when this input signal is high, the device is dese- lected and serial data output (so) is at high impedance. unless an internal program, erase or write status register cycle is in progress, the device will be in standby mode. driving chip select (cs#) low enables the devi ce, placing it in the active power mode. after power-up , a falling edge on chip select (cs#) is required prior to the start of any instruction. hold (hold#) the hold (hold#) signal is used to pause any serial communications with the device without deselecting the device. during the hold instruction, the serial data output (so) is high impedance, and serial data input (si) and serial clock (sck) are don?t care. to start the hold condition, the device must be selected, with chip se lect (cs#) driven low. write protect (w#) the main purpose of this input signal is to freeze the size of the area of memory that is protected against program or erase instructions (as specified by the values in the bp2, bp1 and bp0 bits of the status register). spi modes these devices can be driven by a microcontroller with its spi peripheral running in either of the two fol- lowing modes : cpol = 0, cpha = 0 cpol = 1, cpha = 1 for these two modes, input data is latched in on the rising edge of serial clock (sck), and output data is available from the falling e dge of serial clock (sck). the difference between the two modes, as shown in figure 1, is the clock polarity when the bus master is in standby and not transferring data: sck remains at 0 for (cpol = 0, cpha = 0) sck remains at 1 for (cpol = 1, cpha = 1) operating features all data into and out of the device is shifted in 8-bit chunks. page programming to program one data byte, two instructions are required : write enable (w ren), which is one byte, and a page program (pp) sequence, which consists of four bytes plus data. this is followed by the inter- nal program cycle. to spre ad this overhead, the page program (pp) instru ction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. sector erase, or bulk erase the page program (pp) inst ruction allows bits to be programmed from 1 to 0. before this can be applied, the bytes of the memory need to be first erased to all 1?s (ffh) before any programming. this can be achieved in two ways :1) a sector at a time using the sector erase (se) instruction, or 2) throughout the entire memory, using the bulk erase (be) instruc- tion.
esi esi 5 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information figure 1. bus master and memo ry devices on the spi bus sck spi interface with (cpol, cpha) = (0,0) or (1,1) bus master cs1 cs2 cs3 spi memory device spi memory device spi memory device so si sck so si sck so si sck so si cs# cs# cs# w# w# w# hold# hold# hold# note : the write protect (w#) and hold (hold#) sign als should be driven, high or low as appropriate figure 2. spi modes supported sck cs# sck si msb so cpol cpha 0 0 1 1 msb
esi esi 6 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information polling during a write, program, or erase cycle a further improvement in the time to write status register (wrsr), program( pp) or erase (se or be) can be achieved by not waiting for the worst-case delay. the write in progress (wip) bit is provided in the status register so t hat the application program can monitor its value, polling it to establish when the previous write cycle, program cycle, or erase cycle is complete. active power and standby power modes when chip select (cs#) is low, the device is enabled, and in the active power mode. when chip select (cs#) is high, the device is disabled, but could remain in the active power mode until all inter- nal cycles have completed (program, erase, write status register). the device then goes into the standby power mode. the device consumption drops to i sb . this can be used as an extra deep power down on mechanism, when the device is not in active use, to protect the device from inadvertent write, program, or erase instructions. status register the status register contai ns a number of status and control bits, as shown in figure 7, that can be read or set (as appropriate) by specific instructions wip bit the write in progress (wip) bit indicates whether the memory is busy with a write status register, program or erase cycle. wel bit the write enable latch (wel) bit indicates the sta- tus of the internal write enable latch. bp2, bp1, bp0 bits the block protect (bp2, bp1, bp0) bits are non-vol- atile. they define the size of the area to be software protected against program and erase instructions. srwd bit the status register write disable (srwd) bit is operated in conjunction wi th the write protect (w#) signal. the status register write disable (srwd) bit and write protect (w#) signal allow the device to be put in the hardware protected mode. in this mode, the non-volatile bits of the status register (srwd, bp2, bp1, bp0) become read-only bits. hold condition modes the hold (hold#) signal is used to pause any serial communications with the device without resetting the clocking sequence. hold (hold#) signal gates the clock input to the device. ho wever, taking this signal low does not terminate any write status register, program or erase cycle that is currently in progress. to enter the hold condit ion, the device must be selected, with chip select (cs#) low. the hold con- dition starts on the fallin g edge of the hold (hold#) signal, provided that this coincides with serial clock (sck) being low (as shown in figure 3). the hold condition ends on the rising edge of the hold (hold#) signal, provi ded that this coincides with serial clock (sck) being low. figure 3. hold condition activation sck hold# hold condition (standard use) hold condition (non-standard use)
esi esi 7 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information protection modes the spi memory device boasts the following data protection mechanisms 1) all instructions that mo dify data must be preceded by a write enable(wren) instruction to set the write enable latch (wel) bit. this bit is returned to its reset state by the following events : - power-up - wrdi instruction completion - wrsr instruction completion - pp instruction completion - se instruction completion - be instruction completion 2) the block protect (bp2 , bp1, bp0) bits allow part of the memory to be configured as read-only. this is the software protected mode (spm). 3) the write protect (w#) signal works in coopera- tion with the status register write disable (srwd) bit to enable write-protection. this is the hardware protected mode (hpm). 4) program, erase and writ e status register instruc- tions are checked to verify that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. if the falling edge does not coincide with serial clock (sck) being low, the hold condition starts after serial clock (sck) next goes low. similarly, if the rising edge does not coincide with serial clock (sck) being low, the hold condition ends after serial clock (sck) next goes low (figure 3). during the hold condition, the serial data output (so) is high impedance, and serial data input (si) and serial clock (sck) are don?t care. normally, the device re mains selected, with chip select (cs#) driven low, for the entire duration of the hold condition. this en sures that the state of the internal logic remains unchanged from the moment of entering the hold condition. if chip select (cs#) goes high while the device is in the hold condition, this has the effect of resetting the internal logic of the devi ce. to restart communication with the device, it is necessary to drive hold (hold#) high, and then to drive chip select (cs#) low. this prevents the device from going back to the hold condition. table 1. protected area sizes protected memory area (top level) status register content memory content bp2 bit bp1 bit bp0 bit pro tected area unprotected area 0 0 0 0 none 00000 ~ 7ffff 1 / 8 0 0 1 70000 ~ 7ffff 00000 ~ 6ffff 1 / 4 0 1 0 60000 ~7ffff 00000 ~ 5ffff 1 / 2 0 1 1 40000 ~ 7ffff 00000 ~ 3ffff all 1 0 0 00000 ~ 7ffff + parameter page none all 1 0 1 00000 ~ 7ffff + parameter page none all 1 1 0 00000 ~ 7ffff + parameter page none all 1 1 1 00000 ~ 7ffff + parameter page none
esi esi 8 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information memory organization the memory is organized as : - ES25P40 : eight sectors of 512 kbit each - each page can be individually programmed ( bits are programmed from 1 to 0 ). - the device is sector or bulk erasable (bits are erased from 0 to 1) table 2. sector address sector address range sa7 70000h 7ffffh sa6 60000h 6ffffh sa5 50000h 5ffffh sa4 40000h 4ffffh sa3 30000h 3ffffh sa2 20000h 2ffffh sa1 10000h 1ffffh sa0 00000h 0ffffh
esi esi 9 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information instructions all instructions, addresses, and data are shifted in and out of the device, starting with the most signifi- cant bit. serial data input (si) is sampled on the first rising edge of serial clo ck (sck) after chip select (cs#) is driven low. then, the one byte instruction code must be shifted in to the device, most signifi- cant bit first, on serial data input (si), each bit being latched on the rising edges of serial clock (sck). the instruction set is listed in table 3. every instruction sequence starts with a one byte instruction code. depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. chip select (cs#) must be driven high after the last bit of the instruction sequence has been shifted in. in the case of a read data bytes (read), read sta- tus register (rdsr), re ad data bytes at higher speed (fast_read), read identification (rdid) , read manufacturer and device id (rdmd), read parameter page (rdpara) and fast read parame- ter page (frdpara) instructions, the shifted-in instruction sequence is followed by a data-out sequence. chip select (cs#) can be driven high after any bit of the data-out sequence is being shifted out to ter- minate the transaction. in the case of a page program (pp), program parameter page (ppp), se ctor erase (se), bulk erase (be), parameter page erase(pe), write sta- tus register (wrsr), write enable (wren), deep power down (dp) or write disable (wrdi) instruc- tion, chip select (cs#) mu st be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. that is, chip select (cs#) must driven high when the number of clock pulses after chip select (cs#) being driven low is an exact multiple of eight. all attempts to access the memory array during a write status register cycle, program cycle or erase cycle are ignored, and the internal write status register cycle, program cycle or erase cycle con- tinues unaffected.
esi esi 10 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information table 3. instruction set instruction description one-byte instruction code address bytes dummy byte data bytes status register operations wren write enable 06h (0000 0110) 0 0 0 wrdi write disable 04h (0000 0100) 0 0 0 rdsr read from status register 05h (0000 0101) 0 0 1 to infinity wrsr write to status register 01h (0000 0001) 0 0 1 read operations read read data bytes 03h (0000 0011) 3 0 1 to infinity fast_read read data bytes at higher speed 0bh (0000 1011) 3 1 1 to infinity rdid read identification 9fh (1001 1111) 0 0 1 to 3 rdmd read manufacturer and device id 90h (1001 0000) 0 3 1 to infinity rdpara read parameter page 53h (0101 0011) 3 0 1 to infinity frdpara fast read parameter page 5bh (0101 1011) 3 1 1 to infinity erase operations se sector erase d8h (1101 1000) 3 0 0 be bulk (chip) erase c7h (1100 0111) 0 0 0 pe erase parameter page d5h (1101 0101) 0 0 0 program operations pp page program 02h (0000 0010) 3 0 1 to 256 ppp program parameter page 52h (0101 0010) 3 0 1 to 256 deep power down savings mode operations dp deep power down b9h (1011 1001) 0 0 0 res release from deep power down abh (1010 1011) 0 0 0 release from deep power down and read electronic signature abh (1010 1011) 0 3 1 to infinity
esi esi 11 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 0 0 0 0 0 1 0 0 0 0 0 0 0 1 1 0 write enable (wren) the write enable (wren) in struction (figure 4) sets the write enable latch (wel) bit. the write enable latch (wel) bit must be set prior to every page pro- gram (pp or ppp), erase ( se, be or pe) and write status register (wrsr) instruction. the write enable (wren) instructio n is entered by driving chip select (cs#) low, sending the instruction code, and then driving chip select (cs#) high. write disable (wrdi) the write disable (wrdi) instruction (figure 5) resets the write enable latch (wel) bit. the write disable (wrdi) instruction is entered by driving chip select (cs#) low, sending the instruction code, and then driving chip select (cs#) high. the write enable (wel) bit is reset under the follow- ing conditions : - power-up - wrdi instruction completion - wrsr instruction completion - pp instruction completion - se instruction completion - be instruction completion 0 1 2 3 4 5 6 7 figure 4. write enable ( wr en ) instruction sequence sck cs# si so instruction high impedance 0 1 2 3 4 5 6 7 figure 5. write disable ( w rdi ) instruction sequence sck cs# si so instruction high impedance
esi esi 12 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 0 0 0 0 0 1 0 1 read status register (rdsr) the read status register (rdsr) instruction allows the status register to be read. the status register may be read at any time, even while a program, erase, or write status register cycle is in progress. when one of these cycles is in progress, it is recom- mended to check the write in progress (wip) bit before sending a new instruction to the device. it is also possible to read the status register continu- ously, as shown in figure 6. the status and control bits of the status register are as follows : wip bit the write in progress (wip) bit indicates whether the memory is busy with a write status register, program or erase cycle. this bit is a read only bit and is read by executing a rdsr instruction. if this bit is 1, such a cycle is in progress, if it is 0, no such cycle is in progress. wel bit the write enable latch (wel) bit indicates the sta- tus of the internal write enable latch. when set to 1, the internal write enable latch is set; when set to 0, the internal write enable latch is reset and no write status register, program or erase instruction is accepted. bp2, bp1, bp0 bits the block protect (bp2, bp1, bp0) bits are non-vol- atile. they define the size of the area to be software protected against program and erase instructions. these bits are written with the write status register (wrsr) instruction. when one or both of the block protect (bp2, bp1, bp0) bits is set to 1, the relevant memory area (as defined in table 1) becomes pro- tected against page program (pp), and sector erase (se) instru ctions. the block protect (bp2, bp1, bp0) bits can be written provided that the hardware protected mode has not been set. the bulk erase (be) instruction is executed if, and only if, all block protect (bp2, bp1, bp0) bits are 0. srwd bit the status register write disable (srwd) bit is operated in conjunction with the write protect (w#) signal. the status regi ster write disable (srwd) bit and write protect (w#) signal allow the device to be put in the hardware protected mode (when the status register write disable (srwd) bit is set to 1, and write protect (w#) is driven low). in this mode, the non-volatile bits of the status register (srwd, bp2, bp1, bp0) become read-only bits and the write status register (w rsr) instruction is no longer accepted for execution. figure 6. read status register (rdsr) instruction sequence sck cs# si so status register out status register out msb msb 7 instruction high impedance 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
esi esi 13 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 0 0 0 0 0 0 0 1 write status register (wrsr) the write status regist er (wrsr) instruction allows new values to be wr itten to the status regis- ter. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruc- tion has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) instruction is entered by driving chip select (cs#) low, followed by the instruction code and the data byte on serial data input (si). the instruction sequence is shown in figure 8. the write status register (wrsr) instruction has no effect on bits b6, b5, b1 and b0 of the status register. bits b6, b5 are always read as 0. chip select (cs#) must be driven high after the eighth bit of the data byte has been latched in. if not, the write status register (wrsr) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed write status re gister cycle (whose dura- tion is t w ) is initiated. while the write status regis- ter cycle is in progress, th e status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 dur- ing the self-timed write status register cycle, and is 0 when it is completed. at some unspecified time before the cycle is comp leted, the write enable latch (wel) is reset. the write status register (wrsr) instruction allows the user to change the values of the block protect (bp2, bp1, bp0) bits , to define the size of the area that is to be treated as read-only, as defined in table 1. the write status register (wrsr) instruction also allows the user to set or reset the status register write disable (srwd) bit in accordance with the write protect (w#) signal. the status register writ e disable (srwd) bit and write protect (w#) signal allow the device to be put in the hardware protect ed mode (hpm). the write status register (wrsr) instruction cannot be exe- cuted once the hardware protected mode (hpm) is entered. figure 7. status register format srwd 0 0 bp2 bp1 bp0 wel wip status register write disable block protect bits write enable latch bit write in progress bit b7 b6 b5 b4 b3 b2 b1 b0 figure 8. write status regist er (wrsr) instruction sequence status register in sck cs# si so instruction high impedance 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 msb 7 6 5 4 3 2 1 0
esi esi 14 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information the protection features of the device are summa- rized in table 4. when the status register write disable (srwd) bit of the status register is 0 (its initial delivery state), it is possible to write to the status register provided that the write enable latch (wel) bit has previ- ously been set by a write enable (wren) instruc- tion, regardless of the whether write protect (w#) is driven high or low. when the status register write disable (srwd) bit of the status register is set to 1, two cases need to be considered, depending on the state of write pro- tect (w#). 1) if write protect (w#) is driven high, it is possible to write to the status register provided that the write enable latch (wel) bit has previously been set by a write enable (wren) instruction. 2) if write protect (w#) is driven low, it is not possi- ble to write to the status register even if the write enable latch (wel) bit has previously been set by a write enable (wren) in struction. (attempts to write to the status register are rejected, and are not accepted for execution). as a consequence, all the data bytes in the memory area that are software protected (spm) by the block protect (bp2, bp1, bp0) bits of the status register, are also hardware protected against data modification. regardless of the order of the two events, the hardware protected mode (hpm) can be entered : 1) by setting the status register write disable (srwd) bit after driving write protect (w#) low 2) or by driving write protect (w#) low after setting the status register write disable (srwd) bit. the only way to exit the hardware protected mode (hpm) once entered is to pull write protect (w#) high. if write protect (w#) is permanently tied high, the hardware protected mode (hpm) can never be activated, and only the software protected mode (spm), using the block protect (bp2, bp1, bp0) bits of the status register, can be used. table 4. protection modes w# signal srwd bit mode write protection of the sta- tus register protected area (see note) unprotected area (see note) 11 software protected (spm) status register is writable (if the wren instruction has set the wel bit). the values in the srwd, bp2, bp1 and bp0 bits can be changed. protected against page program and erase(se, be,pe) ready to accept page program and sector erase instructions 10 00 01 hardware protected (hpm) status register is hardware write protected. the values in the srwd, bp2, bp1 and bp0 bits can- not be changed protected against page program and erase (se,be,pe) ready to accept page program and sector erase instructions note: 1. as defined by the values in the block protected (bp2, bp 1, bp0) bits of the status register, as shown in table 1.
esi esi 15 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information read data bytes (read) the read instruction reads the memory at the specified sck frequency (fsck) with a maximum speed of 40mhz. the device is first selected by driving chip select (cs#) low. the instruction code for the read data bytes (read) instruction is followed by a 3-byte address (a23 - a0), each bit being latched-in during the rising edge of serial clock (sck). then the memory contents, at the address, are shifted out on serial data output (so), each bit being shifted out, at a frequency fsck, during the falling edge of serial clock (sck). the instruction sequence is shown in figure 9. the first byte addressed can be at any location. the address automatically increments to the next higher address after each byte of data is shifted out. the whole memory can, theref ore, be read with a single read data bytes (read) instruction. when the highest address is reached, the address counter rolls over to 00000h, allowing the read sequence to be continued indefinitely. the read data bytes (read ) instruction is termi- nated by driving chip sele ct (cs#) high. chip select (cs#) can be driven high at any time during data output. any read data bytes (read) instruction, while a program, erase, or write cycle is in progress, is rejected without having any effect on the cycle that is in progress. read data bytes at higher speed (fast_ read) the fast_read instruction reads the memory at the specified sck frequency (fsck) with a maximum speed of 75 mhz. the device is first selected by driving chip select (cs#) low. the instruction code for fast_read instruction is followed by a 3-byte address (a23 - a0) and a dummy byte, each bit being latched in during the rising edge of serial clock (sck). then the memory contents, at that address, are shifted out on serial data output (so), each bit be ing shifted out. at a maximum fre- quency fsck, during the fa lling edge of serial clock (sck). the instruction sequence is shown in figure 10. the first byte addressed can be at any location. the address automatically increments to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single fast_read instruction. when the highest address is reached, the address counter rolls over to 00000h, allowing the read sequence to be continued indefinitely the fast_read inst ruction is termin ated by driv- ing chip select (cs#) high. chip select (cs#) can be driven high at any time during data output. any fast_read instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 figure 9. read data bytes (r ead) instruction sequence sck cs# si so data out 1 msb msb 7 instruction high impedance 24-bit address data out 2 23 22 21 2 1 0 3 2 1 0 3 6 5 4 7 0 0 0 0 0 0 1 1
esi esi 16 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information read identification (rdid) the read identification (rdi d) instruction allows the 8-bit manufacturer identifica tion to be read, followed by two bytes of the device identification. the manufacturer identification byte is assigned by jedec, and has a value of 4ah for esi products. the device identification is assigned by the device manufacturer, and indicates the memory type in the first byte (20h), and the memory capacity of the device in the second byte (13h). any read identification ( rdid) instruction executed while an erase, program, or write status register cycle is in progress is not decoded, and has no effect on the cycle that is in progress. the device is first select ed by driving chip select (cs#) low. then, the 8-bit instruction code for the instruction is shifted in, wit h each bit being latched in on si during the rising edge of sck. this is followed by the 24-bit device identification, stored in the memory, being shifted out on serial data output (so), with ea ch bit being shifted out during the falling edge of serial clock (sck). the instruction sequence is shown in figure 11. driving cs# high after the device identification has been read at least once terminates the read_id instruction. the read iden tification (rdid) instruc- tion can also be terminated by driving cs# high at any time during data output. when chip select (cs#) is driven high, the device is put in the stand- by power mode. once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions manufacturer identification device i dentification memory type memory capacity 4ah 20h 13h 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 figure 10. read data bytes at higher speed (fast_read) in struction sequence sck cs# si so data out 1 msb msb 7 instruction high impedance 24-bit address data out 2 dummy byte 22 21 23 0 0 0 0 1 0 1 1 2 1 3 0 6 5 7 4 2 1 3 0 6 5 7 4 2 1 3 0
esi esi 17 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 1 0 0 1 1 1 1 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 28 29 30 31 figure 11. read identificatio n (rdid) instruction sequ ence and data-out sequence sck cs# si so device identification msb instruction manufacturer identification 15 14 13 1 0 2 high impedance read manufacturer id & device id (rdmd) the read manufacturer id & device id (rdmd) instruction is an alternat ive to the release from power-down/device id instru ction that provides both the jedec assigned manufacturer id and the spe- cific device id. the read manufacturer id & device id (rdmd) instruction is very similar to the release from power- down/device id instruction. the instruction is initiated by driving the cs# pin low and shift the instruction code ?90h? followed by three dummy bytes. after which, the manufacturer id for esi (4ah) and the device id (12h) are shifted out on the falling edge sclk with most significant bit (msb) first as shown in figure 12. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving cs# pin. 1 0 0 1 0 0 0 0 figure 12. read manufacturer id & device id (rdmd) instruction sequence and data-out sequence si 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 sck cs# so manufacturer id msb msb 7 instruction high impedance 3 dummy bytes device id 23 22 21 2 1 0 3 2 1 0 3 6 5 4 7
esi esi 18 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information page program (pp) the page program (pp) in struction allows bytes to be programmed in the memory (changing from 1 to 0). before it can be accepted, a write enable (wren) instruction must previously have been exe- cuted. after the write en able (wren) instruction has been decoded, the device sets the write enable latch (wel). the page program (pp) instruction is entered by driving chip select (cs#) low, followed by the instruction code, three address bytes and at least one data byte on serial data input (si). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 13. if more that 256 data bytes are sent to the device, the addressing will wrap to the beginning of the same page, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. if fewer than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. chip select (cs#) must be driven high after the eighth bit of the last data byte has been latched in, otherwise the page program (pp) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed pa ge program cycle (whose duration is t pp ) is initiated. while the page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 dur- ing the self-timed page program cycle, and is 0 when it is completed. at some unspecified time before the cycle is comp leted, the write enable latch (wel) bit is reset. a page program (pp) instruction applied to a page that is protected by the block protect (bp2, bp1, bp0) bits (see table 1) is not executed. 0 0 0 0 0 0 1 0 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 sck cs# si msb 23 instruction 24-bit address figure 13. page program ( pp) instruction sequence data byte1 msb 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 sck cs# si msb data byte 2 msb data byte 3 data byte256 msb 2072 2073 2074 2075 2076 2077 2078 2079 22 21 2 1 0 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6
esi esi 19 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information sector erase (se) the sector erase (se) instruction sets to 1 (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instructio n has been decoded, the device sets the write enable latch (wel). the sector erase (se) instruction is entered by driv- ing chip select (cs#) low, followed by the instruc- tion code, and three address bytes on serial data input (si). any address inside the sector (see table 1) is a valid address for the sector erase (se) instruction. chip select (c s#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 14. chip select (cs#) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the sector erase (se) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed sector erase cycle (whose duration is t se ) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 dur- ing the self-timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a sector erase (se) inst ruction applied to any memory area that is protected by the block protect (bp2, bp1, bp0) bits (see table 1) is not executed. 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 figure 14. sector erase ( se) instruction sequence sck cs# si msb instruction 24-bit address 1 1 0 1 1 0 0 0 23 22 21 2 1 0 3
esi esi 20 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 1 1 0 0 0 1 1 1 0 1 2 3 4 5 6 7 figure 15. bulk erase ( be ) instruction sequence sck cs# si instruction bulk erase (be) the bulk erase (be) instruction sets to 1(ffh) all bits inside the entire memory. before it can be accepted, a write enable (wren) in struction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the bulk erase (be) instruction is entered by driving chip select (cs#) low, fo llowed by the instruction code, serial data input (si). no address is required for the bulk erase (be). ch ip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 15. as soon as chip select (cs#) is driven high, the self-timed bulk erase cycle (whose duration is t be ) is initiated. while the bulk erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self- timed bulk erase cycle, and is 0 when it is com- pleted. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a bulk erase (be) instruction is executed only if all the block protect (bp2, bp1, bp0) bits (see table 1) are set to 0. the bulk erase (be) instruction is ignored if one or more sectors are protected.
esi esi 21 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 1 0 1 1 1 0 0 1 deep power down (dp) the deep power down (d p) instruction puts the device in the lowest current mode of 1ua typical. it is recommended that the standard standby mode be used for the lowest power current draw, as well as the deep power down (dp) as an extra software protection mechanism when this device is not in active use. in this mode, the device ignores all write, program and erase instructions. chip select (cs#) must be driven low for the entire duration of the sequence. the deep power down (dp) instruction is entered by driving chip select (cs#) low, followed by the instruction code on serial data input (si). chip select (cs#) must be driven low for the entire dura- tion of the sequence. the instruction sequence is shown in figure 16. driving chip select (cs#) high after the eighth bit of the instruction code has been latched puts the device in deep power down mode. the deep power down mode can only be entered by executing the deep po wer down (dp) instruc- tion to reduce the standby current (from i sb to i dp as specified in table 6). as soon as chip select (cs#) is driven high, it requires a delay of t dp cur- rently in progress befo re deep power down mode is entered. once the device has entered the deep power down mode, all instructions are ignored except the release from deep power down (res) and read electronic signature. this releases the device from the deep power down mode. the release from deep power down and read electronic signature (res) instruction also allows the electronic signa- ture of the device to be output on serial data out- put (so). the deep power down mode automatically stops at power-down, and the device always powers up in the standby mode. any deep power down (dp) instruction, while an erase, program or wrsr cycle is in progress, is rejected without having any effect on the cycle in progress. figure 16. deep power down ( dp ) instruction sequence cs# si standby mode instruction deep power down mode t dp 0 1 2 3 4 5 6 7 sck
esi esi 22 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information release from deep power down (res) the release from deep po wer down (res) instruc- tion provides the only way to exit the deep power down mode. once the device has entered the deep power down mode, all in structions are ignored except the release from deep power down (res) instruction. executing th is instruction takes the device out of deep power down mode. the release from deep po wer down (res) instruc- tion is entered by driving chip select (cs#) low, fol- lowed by the instruction code on serial data input (si). chip select (cs#) mu st be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 17. driving chip select (cs#) high after the 8-bit instruc- tion byte has been received by the device, but before the whole of the 8-bit electronic signature has been transmitted for the first ti me, still insures that the device is put into standby mode. if the device was previously in the deep power down mode, though, the transition to the stand-by power mode is delayed by t res , and chip select (cs#) must remain high for at least t res(max) , as specified in table 8. once in the stand-by power mode, the device waits to be selected, so that it can re ceive, decode and execute instructions. release from deep power down and read electronic signature (res) once the device has entered deep power down mode, all instructions are ignored except the res instruction. the res instruction can also be used to read the old style 8-bit electronic signature of the device on the so pin. the res instruction always provides access to the electronic signature of the device (except while an erase, program or wrsr cycle is in progress), and can be applied even if dp mode has not been entered. any res instruction executed while an erase, program or wrsr cycle is in progress is not decoded, and has no effect on the cycle in progress. the device features an 8-bit electronic signature, whose value for the ES25P40 is 12h. this can be read using res instruction. the device is first selected by driving chip select (cs#) low. the instructio n code is followed by 3 dummy bytes, each bit being latched-in on serial data input (si) during the rising edge of serial clock (sck). then, the 8-bit electronic signature, stored in the memory, is shifted out on serial data output (so), each bit being shi fted out during the falling edge of serial clock (sck). the instruction sequence is shown in figure 18. figure 17. release from deep po wer down instruction sequence 1 0 1 0 1 0 1 1 cs# si standby mode instruction deep power down mode t res 0 1 2 3 4 5 6 7 sck
esi esi 23 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information the release from deep power down and read electronic signature (res) is terminated by driving chip select (cs#) high af ter the electronic signa- ture has been read at least once. sending addi- tional clock cycles on serial clock (sck), while chip select (cs#) is driven low, causes the elec- tronic signature to be output repeatedly. when chip select (cs#) is driven high, the device is put in the stand-by power mode. if the device was not previously in th e deep power down mode, the transition to the stand-by power mode is imme- diate. if the device was previously in the deep power down mode, though, the transition to the stand-by mode is delayed by t res , and chip select (cs#) must remain high for at least t res(max) , as specified in table 8. once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions. read parameter page(rdpara) the parameter page is a 256-byte page of flash memory that can be used for storing serial num- bers, revision information and configuration data that might typically be stored in an additional mem- ory. because the parameter page is relatively small and separate from the array, the erase time is sig- nificantly shorter than that of a sector erase (see t pe in table.8) this makes it convenient for more frequent updates. the read parameter page instruction allows one or more bytes of the parameter page to be read. the instruction is initiated by driving the cs# low and then shifting the instruction code ?53h? followed by a 24-bit address (a23-a0) into the si pin. only the lower 8 address bits (a7-a0) are used, the 16 upper most address bis (a23-a8) are ignored. the code and address bits are latched on the rising edge of the clk pin. after the address is received , the data byte of the addresse d memory location will be shifted out on the so pin at the falling edge of clk with most significant bit (msb) first. the address is automatically incremented to the next higher address after each byte of data is shifted out allow- ing for a continuous stream of data. when the end of the parameter page is re ached the address will wrap to the beginning. the read parameter page instruc- tion is shown in figure 19. the read parameter page (rdpara) instruction is terminated by driving chip select (cs#) high. chip select (cs#) can be driven high at any time during data output. any read parameter page (rdp ara) instruction, while a program, erase, or write cycle is in progress, is rejected without having any effect on the cycle that is in progress. figure 18. release from deep po wer down and read electronic signature (r es) instruct ion sequence 1 0 1 0 1 0 1 1 si 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 sck cs# so device id msb msb instruction high impedance 3 dummy bytes 23 22 21 2 1 0 3 2 1 0 3 6 5 4 7 standby mode deep power down mode t res
esi esi 24 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 figure 19. read parameter page (rdpara) instruction sequence sck cs# si so data out 1 msb msb 7 instruction high impedance 24-bit address data out 2 23 22 21 2 1 0 3 2 1 0 3 6 5 4 7 0 1 0 1 0 0 1 1 fast read parameter page(frdpara) the fast read parameter page instruction is basi- cally the same as the read parameter page instruction except that it allows for a faster clock rate to be used. the fast read parameter page instruction can opperate at clock frequency d.c. to a maximum of f sck . this is accomplished by adding a dummy byte after the 24-bit address, as shown in figure 20. the dummy byte allows the devices internal circuits additional time for setting up the initial address. the dummy byte data value on the si pin is a don?t care. 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 figure 20. fast read pa rameter page (frdpara ) instruction sequence sck cs# si so data out 1 msb msb 7 instruction high impedance 24-bit address data out 2 dummy byte 22 21 23 0 1 0 1 1 0 1 1 2 1 3 0 6 5 7 4 2 1 3 0 6 5 7 4 2 1 3 0
esi esi 25 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information program parameter page (ppp) the program parameter page instruction allows up to 256 bytes to be programmed at memory word locations that have been previously erased to all 1s ?ffffh? a write enable(wren) instruction must be executed before the device will accept the pro- gram parameter page instruction(status register bit wel must equal 1). the instruction is initiated by driving the cs# pin low then shifting the instruc- tion code ?52h? followed by a 24-bit address(a23- a0) and at least one bytes, into the si pin. only the lower 8 address bits (a7-a0) are used, the 16 upper most address bit (a23-a8) are ignored. the cs# pin must be held low for the entire length of the instruction while data is be ing sent to the device. the program parameter page instruction sequence is shown in figure 21. less than 256 bytes can be programmed without having any effect on other data within the page. if more than 256 bytes are sent to the device the addressing will wrap to th e beginning of the page. if previously written data bytes are over-written the data will not be valid. in most application it is be st to read the full 256-byte contents of the page into a temporary ram. data can then be modified as needed and the entire 256 bytes can then be reprogrammed into the parameter page at one time. as with the write and erase instruction, the cs# must be driven high after the eighth bit of the last byte has been latched. if this is not doen the param- eter page program instru ction will not be executed. after cs# is driven high, the self timed page pro- gram instruction will commenc e for a time duration of t pp , as specified in table 8. while the page program cycle is in progress, the read status register instruction may still be ac cessed for checking the status of the wip bit. the wip bit is a 1 during the program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instruction again. after the program cycle has started the write enable latch(wel) bit in the status register is cleared to 0. the program parameter page instruction will not be excecuted if the addressed page is protected by the block pro- tect(bp2, bp1, bp0) bits 0 1 0 1 0 0 1 0 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 sck cs# si msb 23 instruction 24-bit address data byte1 msb 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 sck cs# si msb data byte 2 msb data byte 3 data byte256 msb 2072 2073 2074 2075 2076 2077 2078 2079 22 21 2 1 0 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6 2 1 0 5 4 3 7 6 figure 21. program pa rameter page (ppp) instruction sequence
esi esi 26 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information 1) vcc (min) at power-up, and then for a further delay of t pu (as described in table 5) 2) vss at power-down a simple pull-up resistor on chip select (cs#) can usually be used to insure safe and proper power-up and power-down. the device ignores all instru ctions until a time delay of t pu (as described in table 5) has elapsed after the moment that vcc rises above the minimum vcc threshold. however, correc t operation of the device is not guaranteed if by this time vcc is still below vcc (min). no write status register, program or erase instructions should be sent until t pu after vcc reaches the minimum vcc threshold (see figure 23). at power-up, the device is in standby mode (not deep power down mode) and the wel bit is reset. normal precautions must be taken for supply rail decoupling to stabilize the vcc feed. each device in a system should have t he vcc rail decoupled by a suitable capacitor close to the package pins (this capacitor is generally of the order of 0.1uf). at power-down, when vcc drops from the operating voltage to below the minimum vcc threshold, all operations are disabled and the device does not respond to any instructions. (the designer needs to be aware that if a power-down occurs while a write, program or erase cycle is in progress, data corrup- tion can result.) erase parameter page(pe) the erase parameter page instruction sets all 256 bytes of memory in the parameter page to the erased state of all 1s (ffh). a write enable instruc- tion must be executed be fore the device will accept the erase parameter page instruction(status regis- ter bit wel must equal 1). t he instruction is initiated by driving the cs# pin low and shifting the instruc- tion code ?d5h?. the erase parameter page instruc- tion sequence is shown in figure 22. the cs# pin must be driven high after the eighth has been latched. if this is not done the erase parameter page instruction will not be executed. after cs# is driven high, the self-timed erase parameter page instuction will commence for a time duration of t pe . while the erase parameter page cycle is in progress, the read status register instruction may still be accessed to check th e status of the wip bit. the wip bit is a 1 during the erase parameter page cycel and becomes a 0 when finished and the device is ready to accept other instructions again. after the erase parameter page cycle has started the write enable latch(wel) bit in the status register is cleared to 0. the erase parameter page instruction will not be executed if any page is protected by the block protect(bp2, bp1, bp0) bits. power-up and power-down the device must not be selected at power-up or power-down (that is, cs# must follow the voltage applied on vcc) until vcc reaches the correct value as follows: 1 1 0 1 0 1 0 1 0 1 2 3 4 5 6 7 figure 22. erase parameter page ( pe ) instruction sequence sck cs# si instruction
esi esi 27 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information figure 23. power-up timing time vcc vcc max vcc min full device access t pu table 5. power-up timing symbol parameter min. max. unit vcc (min) vcc (minimum) 2.7 v t pu vcc (min) to device operation 10 ms initial delivery state the device is delivered with all bits set to 1 (each byte contains ffh). the status register contains 00h (all status register bits are 0). maximum rating stressing the device above the rating listed in the absolute maximum ratings section below may cause permanent damage to the device. theses are stress ratings only and operation of the device at these or any other conditions above those indi- cated in the operating sectio ns of this specification is not implied. exposure to absolute maximum rat- ing conditions for extended periods may affect device reliability. absolute maximum ratings ambient storage temperature .... -65 o c to +150 o c voltage with respect to ground all inputs and i/os ........................... - 0.3v to 4.5v operating ranges ambient operating temperature (t a ) commercial .......................................... 0 o c to +70 o c industrial .............................................. -40 o c to +85 o c positive power supply voltage range ............... ........... ........... ...... 2.7v to 3.6v note :operating ranges define those limits between which the functionality of the device is guaranteed
esi esi 28 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information dc characteristics this section summarizes the dc and ac characteristics of the device. de signers should check that the oper- ating conditions in their circuit matc h the measurement conditions specified in the test specifications in table 7, when relying on the quoted parameters. symbol description test conditions min. typ. max. unit vcc supply voltage 2.7 3 3.6 v i li input leakage current v in = gnd to vcc 1 ua i sb standby current cs# = vcc 50 ua i dp deep power down current cs# = vcc 1 10 ua i lo output leakage current v in = gnd to vcc 1 ua i cci active read current sck = 0.1 vcc / 0.9 vcc so = open 40mhz 6 ma sck = 0.1vcc / 0.9 vcc so= open 75 mhz 12 i cc2 active page program current cs# = vcc 24 ma i cc3 active wrsr current cs# = vcc 24 ma i cc4 active sector erase current cs# = vcc 24 ma i cc5 active bulk erase current cs# = vcc 24 ma v il input low voltage - 0.3 0.3 vcc v v ih input high voltage 0.7 vcc vcc + 0.5 v v ol output low voltage i ol = 1.6 ma, vcc = vcc min 0.4 v v oh output high voltage i oh = -0.1ma, vcc - 0.2 v notes: 1. typical values are at t a = 25 o c and vcc = 3v table.6 dc characteristics
esi esi 29 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information symbol parameter min max unit c l load capacitance 30 pf input rise and fall times 5 ns input pulse voltage 0.2vcc to 0.8vcc v input timing reference voltage 0.3vcc to 0.7vcc v output timing reference voltage 0.5vcc v table 7. test specifications input and output timing reference levels input levels 0.8vcc 0.2vcc 0.5vcc figure 24. ac measurements i/o waveform 0.3vcc 0.7vcc test conditions
esi esi 30 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information ac characteristics symbol description min typ max unit f sck sck clock frequency read instruction d.c 40 mhz f sck sck clock frequency for fast read and all other instructions except read instruction d.c 75 mhz t crt clock rise time (slew rate) 0.1 v/ns t cft clock fall time (slew rate) 0.1 v/ns t wh sck high time 6 ns t wl sck low time 6 ns t cs cs# high time 100 ns t css (note 3) cs# setup time 5 ns t csh (note 3) cs# hold time 5 ns t hd (note 3) hold# setup time (relative to sck) 5 ns t cd (note 3) hold# hold time (relative to sck) 5 ns t hc hold# setup time (relative to sck) 5 ns t ch hold# hold time (relative to sck) 5 ns t v output valid 6ns t ho output hold time 0 ns t hd:dat data in hold time 3 ns t su:dat data in setup time 3 ns t r input rise time 5 ns t f input fall time 5 ns t lz (note 3) hold# to output low z 6 ns t hz (note 3) hold# to output high z 6 ns t dis (note 3) output disable time 8 ns t wps (note 3) write protect setup time 15 ns t wph (note 3) write protect hold time 15 ns t res release dp mode 3 us t dp cs# high to deep power down mode 3 us t w write status register time 5 ms t pp page programming time 1.5 (note 1) 3 (note 2) ms t se sector erase time 0.5 (note 1) 3 (note 2) sec t be bulk erase time 6 (note 1) 12 (note 2) sec t pe parameter page erase time 20 (note 1) 100 (note 2) ms notes: 1. typical program and erase times assume the following conditions : 25?c, vcc = 3. 0v ; 10,000 cycles ; checkerboard data patte rn 2. under worst-case conditions of 90?c ; vcc = 2.7v ; 100,000 cycles. 3. not 100% tested. table 8. ac characteristics
esi esi 31 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information figure 25. spi mode 0 (0,0) input timing sck cs# si so figure 26. spi mode 0 (0,0) output timing lsb in t css t csh t crt t hd:dat t csh t css t cs msb in t cft t su:dat lsb out t dis t wl t wh t v t hd t hd t v sck cs# so
esi esi 32 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information figure 27. hold# timing sck cs# si so t cd t hc t hd t ch t lz t hz hold# high impedance sck cs# si so w# t wph t wps figure 28. write protect se tup and hold timing duri ng wrsr when srwd = 1
esi esi 33 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information physical dimensions s08 wide - 8 pin plastic small outline 208 mils body width package b c1 b1 (c) with plating base metal section a-a 7 a 0.10 c 0.10 c // a2 a1 seating plane c seating plane gauge plane l 0.07 r min. a a l1 see detail b 1 2 l2 c h detail b h e e/2 b e1/2 e1 a 5 d 3 4 e b 5 d 9 3 4 0.33 c 0.20 c a-b 0.25 m c a-b d notes: 1. all dimensions are in bo th inches and millimeters. 2. dimensioning and tolerancing per asme y 14.5m - 1994. 3. dimension d does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 mm per end. dimension e1 does not include interlead flash or protrusion interlead flash or protrusion shall not exceed 0.25mm per side. d and e1 dimensions are determined at datum h. 4. the package top may be smaller than the package bottom. dime- -nsions d and e1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash. but including any mismatch between the top and bottom of the plastic body. 5. datums a and b to be determined at datum h. 6. ?n? is the maximum number of te rminal positions for the specified package length h. 7. the dimensions apply to the flat section of the lead between 0.10 to 0.25 mm from the lead tip. 8. dimension ?b? does not include dambar protrusion. allowable dam- bar protrusion shall be 0.10 mm total in excess of the ?b? dimension at maximum material condition. the dambar cannot not be located on the lower radius of the lead foot. 9. this chamfer feature is optional. if it is not present, then a pin 1 idenfifier must be located within the index area indicated. 10.lead coplanarity shall be within 0.10 mm. as measured from the seating plane. package soc 008 (inches) soc 008 (mm) jedec symbol min max min max a 0.069 0.085 1.753 2.159 a1 0.002 0.0098 0.051 0.249 a2 0.067 0.075 1.70 1.91 b 0.014 0.018 0.356 0.483 b1 0.013 0.018 0.330 0.457 c 0.0075 0.0095 0.191 0.241 c1 0.006 0.008 0.152 0.203 d 0.208 bsc 5.283 bsc e 0.315 bsc 8.001 bsc e1 0.208 bsc 5283 bsc e 0.050 bsc 1.27 bsc l 0.020 0.030 0.508 0.762 l1 0.055 ref 1.40 ref l2 0.010 bsc 0.25 bsc n8 8 0? 8? 0? 8? 5? 15? 5? 15? 0? 0? 2 1
esi esi 34 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information orderng information standard products esi standard products are available in several package and operating ranges. the order number (valid combi- nation) is formed by a co mbination of the following: package type 2 : 8 pin 208 mil sop package materials c : standard g : lead (pb) - free (note) speed option 75 : 75 mhz density 40 : 4 mb device family es25p : esi memory 3.0 volt-only, serial peripheral interface (spi) flash memory es25p 40 - 75 c g 2 t packing type t : tube (standard) (note) r : 13? tape and reel (note) y : tray temperature range i : industrial (- 40 o c to + 85 o c) c : commercial ( 0 o c to + 70 o c) table 1. es25p valid combinations es25p valid combinations base ordering part number speed option temperature & package material package type packing type package marking ES25P40 75 cg, cc, ig,ic (note) 2, 7 t, r , y (note) p40 + (speed) + (temp) +( package material ) notes: contact your local sales office for availability.
esi esi 35 rev. 0d may 11 , 2006 ES25P40 excel semiconductor inc. advanced information excel semiconductor inc. 1010 keumkang hightech valley, sangdaewon1-dong 13 3-1, jungwon-gu, seongnam-si, kyongki-do, rep. of korea. zip code : 462-807 tel : +82-31-777-5060 fax : +82-31-740-3798 / homepage : www.excelsemi.com the attached datasheets are provided by excel semico nductor.inc (esi). esi reserves the right to change the spec- ifications and products. esi will answer to your qu estions about device. if you have any questions, please contact the esi office. document title 4m serial flashmemory revision history revision number data items rev. 0a jan. 03,2006 initial release version. rev.0b mar.14,2006 device name changed rev.0c may.01,2006 the clock frequency was changed from 66mhz to 75mhz. rev.0d may.11,2006 wson package not supported

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